CXMT's new DRAM tech to test Korean memory makers' dominance

Concerns are growing that the technological gap between China's CXMT and Korean memory makers Samsung Electronics and SK hynix in DRAM technology has already narrowed, after the Chinese company unveiled plans to launch server memory product by the end of this year featuring a next-generation memory cell architecture that remains only on the technology road maps of the two Korean chipmakers. According to South China Morning Post and other Chinese media outlets, CXMT President Cao Kanyu said the company plans to roll out a new server DDR5 based featuring the new architecture during an industrial event in Shanghai on Saturday. The new architecture uses a design called 4F square, which reduces the space occupied by each memory cell. F refers to the minimum line width that a given DRAM manufacturing process can draw. In current processes such as 1a, 1b and 1c, F is just over 10 nanometers. 4F square means each cell occupies an area equivalent to four times F squared. The current industry standard is 6F square, meaning the new technology could theoretically reduce the area occupied by each me